Gallium Nitride (GaN) is a wide bandgap semiconductor material. The performance benefits over its silicon counterparts, such as ability to operate at higher temperature, high frequency, high power density, along with higher operating voltage is driving the growth of the global gallium nitride semiconductor devices market. The increasing penetration of gallium nitride in RF power application is expected to be the major growth driver for the gallium nitride semiconductor devices market during the forecast period. The RF based switching is increasing its penetration in the modern electrical energy systems, particularly in the renewable energy infrastructure, such as solar power. Apart from the higher reliability, gallium nitride semiconductor devices play an important role in lowering overall system costs. However, in applications below 3.5GHz gallium nitrate is not a cost effective solution, which is resulting in low penetration within application such as CATV, which in turn is hindering the growth of the gallium nitride market up to some extent.
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Gallium nitride (GaN) semiconductor material has high power characteristics, in addition to high operating frequency. Gallium Nitride is widely used in blue laser diodes and blue light-emitting diodes used in Blu-ray disc players.
Among the various applications of gallium nitride (GaN) semiconductor devices market, the consumer electronics segment accounted for the largest market share in 2014, owing to the high penetration of gallium nitride in LED based display and LED based lighting. The communication segment accounted for the second largest and the fastest growing application segment in the global market in 2014, which was fuelled mainly by the high penetration of gallium nitride in RF based application, including power electronics switching equipment. The growing demand of gallium nitrate semiconductor devices from Industrial, solar power, and wind energy sector is expected to drive the growth of the global market during the forecast period. Moreover, the growing application areas of gallium nitride semiconductor devices market in the defense and aerospace sector, in addition to electric and hybrid vehicle is laying new opportunities for the growth of the global market in the coming years.
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Some of the competitors in the global gallium nitride (GaN) semiconductor devices market are, GaN Systems Inc., Efficient Power Conversion Corporation, Freescale Semiconductor Inc., Toshiba Corporation, and Texas Instruments Inc.
Gallium Nitride (GaN) Semiconductor Devices Market Segmentation
- Power Semiconductors
- GAN Power Discrete Market
- GAN Power Transistors Market
- GAN Diodes & Rectifiers Market
- GAN Power ICs Market
- Computer Hardware Power Modules
- Computer Ups Systems
- Communication Sector
- Wired Communication Devices
- Signal Amplifiers & Switching Systems
- Wireless Applications
- Satellite Communication Applications
- Industrial, Power, Solar And Wind Sectors (IPSW)
- Smart Grid Power Systems
- Wind Turbines And Wind Power Systems
- Power Factor Correction (PFC) Systems
- Photo-Voltaic Inverters
- Solar Panels
- Consumer Electronics Sector
- Led Lighting
- Automotive Sector
- Electric Vehicles, Hybrid Electric Vehicles (HEVS)
- Switch Mode Power Supply Systems
- Military, Defense & Aerospace Sector
- Combat Vehicles
- Electronic Warfare Communication
- Microwave Radiation Applications
- Ships & Vessels
- Radiation-Hard Electronics
- Medical Sector
- Biomedical Electronics
- Implantable Medical Devices
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